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脉冲成核Pdf研究和改进钨工艺

 
上海交通大学硕士论文
目录
一个主题的背景和主题的意义····································
1
技术集成电路的金属布线的一个来源和状态·············
1
研究的重要性··································
介绍与两个WCVD脉冲成核过程有关······································
2
工艺描述1 WCVD············································
2
1
1 CVD°°过程的早期阶段·············... 3
2
1
CVD钨的两个属性·······································4
2
1
3脉冲解释核WCVD···································7
2
2WCVD·········································制造业的发展和实施半导体···················
2
2
在半导体工艺中1片纸钨·········································的·················
2
3概要············································································13
实验的工具和方法3···················································14
3
一个先...................................................·····················
3
1
单脉冲生长装置钨核的结构和原理.............................···········14
3
1
改进核传统脉冲WCVD WCVD ..................................................................................................................................................硬件设备
3
1
传统的脉冲核WCVD WCVD和4在制造过程中进行了解释.....................